10 x 3I201D (AI201D) Russian Military Ga-As Oscillator Tunnel Diode, USSR

Description

Russian Military Gallium- Arsenide Switching Alloyed Tunnel Diode 3I201D(AI201D)
,
Rus name:  3
И
201
Д
(
АИ
201
Д
)
Diodes
A
I201D tunnel, GaAs, floatable, generator.
Designed for use in high-frequency generators.
Available in a sintered body with a pigtail.
Metal-ceramic body
New never used . New. Old Stock
Lot of 10 pcs
Parameters diode 3
I
201D /
AI201D
(3
И
201
Д
/
АИ
201
Д
(rus name))
:
diode Weight no more than 0,1 g
Material --------- Germanium (GE)
Electrical parameters
AI201D
:
Peak current :
• at 298 K (+25C) -
90
to 110 mA
• at 358 K (+85C) -
80
to 110 mA
• at 213 K (-60C)   -
80
to 12
0
mA
The ratio of the peak current to the current trough, at least:
• at 298 K (+25C) – 10,
• at 373 K (+100C) – 6,
• at 213
D
(-60C)   - 8
Peak voltage, not more than: - 0.2V
Resistance losses, no more than:
at Iobr and = 100 mA –
5
Ohm
The total diode capacitance at low current-voltage characteristics for f = 1 ÷ 10 MHz:
- 3,7…7pF
Case
body
housing capacity
, not more than - 0.8 pF
Inductance Diode
- no more than 1.3 nH
Limit operational data
:
Constant forward voltage at:
from 213K (-60C) to 358K (+85C) :
0,45V
Ambient temperature:
from 213K (-60C) to 358K (+10C)
Remarks:
1. When mounting devices on the jig may be cut tape conclusions without applying mechanical stress to the body of the device.
2. Pressure on the instrument cover, perpendicular to the plane shall be not more than 15 N.
3. It is not allowed to check diodes tester.
4. Continuous operation of the diodes on the first ascending branch and the section of the negative resistance of the current-voltage characteristics.
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